首页> 外国专利> SUPERCONDUCTING MAGNETIC FIELD GENERATION DEVICE, SUPERCONDUCTING MAGNETIC FIELD GENERATION METHOD AND NUCLEAR MAGNETIC RESONANCE DEVICE

SUPERCONDUCTING MAGNETIC FIELD GENERATION DEVICE, SUPERCONDUCTING MAGNETIC FIELD GENERATION METHOD AND NUCLEAR MAGNETIC RESONANCE DEVICE

机译:超导磁场产生装置,超导磁场产生方法和核磁共振装置

摘要

PROBLEM TO BE SOLVED: To provide a superconducting magnetic field generation device capable of more improving uniformity of a magnetic field strength within an internal space (bore) of a cylindrical superconductor.SOLUTION: A superconducting magnetic field generation device 100 includes an outer superconductor 2 and an inner superconductor 3 which are disposed coaxially and formed cylindrical. The inner superconductor 3 is formed in such a manner that a ratio (Jc&thetas;1/Jcz1) of a critical current density (Jc&thetas;1) in a circumferential direction with respect to a critical current density (Jcz1) in an axial direction of the inner superconductor 3 is close to 1 rather than a ratio (Jc&thetas;2/Jcz2) of a critical current density (Jc&thetas;2) in a circumferential direction with respect to a critical current density (Jcz2) in an axial direction of the outer superconductor 2.
机译:解决的问题:提供一种超导磁场产生装置,其能够进一步提高圆柱形超导体的内部空间(孔)内的磁场强度的均匀性。解决方案:超导磁场产生装置100包括外部超导体2和同轴地布置并且形成为圆柱形的内部超导体3。内超导体3形成为使得圆周方向上的临界电流密度(Jcθ1)相对于其轴向上的临界电流密度(Jcz1)的比率(Jcθ1/ Jcz1)。内超导体3相对于外超导体的轴向上的临界电流密度(Jcz2)在圆周方向上的临界电流密度(Jcθ2)的比(Jcθ2/ Jcz2)接近于1。 2。

著录项

  • 公开/公告号JP2016006825A

    专利类型

  • 公开/公告日2016-01-14

    原文格式PDF

  • 申请/专利权人 AISIN SEIKI CO LTD;

    申请/专利号JP20140127301

  • 申请日2014-06-20

  • 分类号H01F6/00;H01F6/04;H01F7/20;G01R33/3815;

  • 国家 JP

  • 入库时间 2022-08-21 14:46:34

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