首页> 外国专利> LASER EMISSION SYSTEM, HETEROSTRUCTURE AND ACTIVE ZONE COMPRISING COUPLED SUB-QUANTUMWELLS, USE FOR A LASER EMIISSION AT 1.55 MICROMETERS

LASER EMISSION SYSTEM, HETEROSTRUCTURE AND ACTIVE ZONE COMPRISING COUPLED SUB-QUANTUMWELLS, USE FOR A LASER EMIISSION AT 1.55 MICROMETERS

机译:激光发射系统,异质结构和有源区域,包括耦合的子量子阱,用于1.55微米的激光发射

摘要

The invention relates to an active zone (5) for a light emission system (1), said active zone including a series of layers (50-52, 60-64, 70-74), at least a portion of which consists of antimony semiconductors III-V, said layers (50-52, 60-64, 70-74) being arranged so as to form at least one quantum well (6, 7) surrounded by barriers (41, 42, 43) with a view to generating a light emission (9). Said active zone (5) also includes at least one layer (61, 63, 71, 73) capable of forming an intermediate barrier that is arranged relative to a quantum well (6, 7) so as to form at least two quantum sub-wells (60, 62, 64, 70, 72, 74) that are coupled with each other. The invention also relates to: a heterostructure (4) including at least one optical confinement layer (41, 43) surrounding at least one such active zone (5); a laser emission system (1) including one such heterostructure (4) that is deposited onto a substrate (2); and the use one such active zone (5) with a view to emitting a light beam having a wavelength of 1.55 μm.
机译:本发明涉及用于发光系统(1)的活性区(5),所述活性区包括一系列层(50-52、60-64、70-74),其中至少一部分由锑组成。半导体层III-V,所述层(50-52、60-64、70-74)被布置为形成至少一个由势垒(41、42、43)围绕的量子阱(6、7),以期产生光发射(9)。所述有源区(5)还包括至少一层(61、63、71、73),其能够形成相对于量子阱(6、7)布置的中间势垒,从而形成至少两个量子子阱。彼此耦合的孔(60、62、64、70、72、74)。本发明还涉及:异质结构(4),其包括围绕至少一个这样的有源区(5)的至少一个光学限制层(41、43);以及激光发射系统(1),其包括一个这样的异质结构(4),该异质结构沉积在基板(2)上;为了发出波长为1.55μm的光束,使用一个这样的有源区(5)。

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