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METHOD FOR RECOVERY TIME-TEMPERATURE CONDITIONS OF DIAMOND GENESIS

机译:恢复金刚石成因的时温条件的方法

摘要

1. A method of reducing the temperature-time conditions genesis type IaAB diamonds or mixed type Ib-IaA, based on the calculation of the local concentration of the impurity C in nitrogen forms, A and B in the crystal is measured, e.g., by IR microspectroscopy, local values ​​of the integral parameter aggregation kinetics Kt n-th order corresponding nitrogen centers, determining the temperature and time of the genesis, characterized in that it additionally register the change of the integral parameter values ​​corresponding to the aggregation of nitrogen centers Δ (Kt) by crystal growth layers, for example, in any field of fine diamond plate intersecting the growth layers, and the determination of the temperature T and the time Δt genesis carried out uravneniyaAexp (-E / kT) × Δt = Δ (Kt), where: k- Boltzmann constant, Au E- constant and the Arrhenius activation energy aggregation C- or A-centers corresponding order kinetics n.2 aggregation. A method according to claim 1, characterized in that the admissible pairs of values ​​of temperature T and Δt the duration of continuous growth of the crystal region is determined by the magnitude and uniform monotonic decrease aggregation of the integral parameter Δ (Kt) by layers selected region.3 growth. A method according to claim 1, characterized in that the admissible pairs of temperature T and the duration Δt postrostovogo host crystal diamond values ​​in the isothermal pattern is determined by the value of the integral parameter corresponding aggregation nitrogen centers (Kt) near the undissolved portion of the outer surface of the crystal, where A (Kt) is received equal to (Kt) .4. A method according to claim 1, characterized in that the pairs of values ​​allowable duration Δt and temperature
机译:1.一种减少温度-时间条件的方法,该方法用于根据IaAB型金刚石或Ib-IaA型混合金刚石的温度-时间条件的计算,基于氮形式杂质C的局部浓度的计算,例如通过以下方法测量晶体中的A和B:红外显微技术,积分参数聚集动力学局部值Kt n阶对应的氮中心,确定生成的温度和时间,其特征在于它还记录了对应于聚集的积分参数值的变化例如,在与生长层相交的细金刚石板的任何区域中,通过晶体生长层确定氮中心的Δt(Kt),并通过uravneniyaAexp(-E / kT)×Δt确定温度T和时间Δt =Δ(Kt),其中:k-玻尔兹曼常数,AuE-常数和阿累尼乌斯活化能聚集C-或A-中心对应于阶次动力学n.2聚集。 2.根据权利要求1所述的方法,其特征在于,晶体区域连续生长的持续时间的温度T和Δt的允许值对是由积分参数Δ(Kt)的大小和均匀单调减少的聚集确定的。层选择区域。3增长。 2.根据权利要求1所述的方法,其特征在于,等温模式中的容许温度对T和持续时间Δt后rostovogo主体晶体金刚石值由未溶解附近的对应聚集氮中心(Kt)的积分参数的值确定。晶体外表面的一部分,其中接收到的A(Kt)等于(Kt).4。 2.根据权利要求1所述的方法,其特征在于,所述一对值对允许的持续时间Δt和温度

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