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Low saturation magnetization in Pt/(Co,Cu) multilyers with perpendicular magnetic anisotropy
Low saturation magnetization in Pt/(Co,Cu) multilyers with perpendicular magnetic anisotropy
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机译：具有垂直磁各向异性的Pt /（Co，Cu）多层膜中的低饱和磁化强度
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摘要
The invention platinum thin film layer and a cobalt-relates to a perpendicular magnetic anisotropic multi-layer film for a magnetic random access memory comprising a copper thin film, a magnetic layer configured by replacing a part of cobalt of magnetic material is in greater detail in the non-magnetic material of copper by preparing the multilayer film in the perpendicular magnetic anisotropy it is directed to a multi-layer film with reduced leakage magnetic field effect to lower the saturation magnetization amount while being held. Since the multi-layer film according to the present invention maintains the perpendicular magnetic anisotropy after the subsequent heat treatment process, a high-performance, high-density, it can be useful in a magnetic random access memory. ;
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