首页> 外国专利> SHOWERHEAD ELECTRODES AND SHOWERHEAD ELECTRODE ASSEMBLIES HAVING LOW-PARTICLE PERFORMANCE FOR SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES

SHOWERHEAD ELECTRODES AND SHOWERHEAD ELECTRODE ASSEMBLIES HAVING LOW-PARTICLE PERFORMANCE FOR SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES

机译:半导体材料加工装置的雾化性能较低的喷头电极和喷头电极组件

摘要

The showerhead electrode materials for semiconductor processing equipment are provided. One embodiment of the showerhead electrode comprises a top electrode and a bottom electrode bonded to each other. The upper electrode comprises at least one plenum. The bottom electrode comprises a plurality of gas holes and a plasma exposed bottom surface in communication with the fluid plenum. The showerhead electrode assembly comprising a showerhead electrode flexibly mounted on a top board is also disclosed. The showerhead electrode assembly is in fluid communication with the temperature control elements spatially separated from the showerhead electrode can be a showerhead electrode temperature control. The showerhead electrode assembly is a method for processing a substrate in the plasma processing chamber is also disclosed, including. ; The showerhead electrode, a semiconductor material, plenums, gas holes
机译:提供了用于半导体加工设备的喷头电极材料。喷头电极的一个实施例包括彼此结合的顶部电极和底部电极。上电极包括至少一个气室。底部电极包括多个气孔和与流体室连通的暴露于等离子体的底表面。还公开了一种喷头电极组件,其包括柔性地安装在顶板上的喷头电极。喷头电极组件与在空间上与喷头电极分开的温度控制元件流体连通,可以是喷头电极温度控制。还公开了喷头电极组件是用于在等离子体处理室中处理基板的方法,包括。 ;花洒电极,半导体材料,气室,气孔

著录项

  • 公开/公告号KR101512524B1

    专利类型

  • 公开/公告日2015-04-15

    原文格式PDF

  • 申请/专利权人 램 리써치 코포레이션;

    申请/专利号KR20097022752

  • 申请日2008-03-27

  • 分类号H01L21/205;C23C16/455;H01L21/285;H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-21 14:58:18

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