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THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES
THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES
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机译：氮气靶通过锌靶的反应溅射制备的薄膜半导体材料
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摘要
The present invention generally includes a reactive sputtering method used to deposit semiconductor films and semiconductor films. The sputtering target may comprise pure zinc (about 99.995 atomic percent or greater) that can be doped with aluminum (from about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target can be reactively sputtered by introducing nitrogen and oxygen into the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen can be based on the film conductivity, the DC voltage change, the film transmittance, or the turning point of the film structure based on the measurements obtained from the deposition without nitrogen-containing gas. Reactive sputtering can occur at temperatures ranging from about room temperature up to several hundreds of degrees Celsius. After the deposition, the semiconductor film may be annealed to further improve the mobility of the film.
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