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EUV TiO2-SiO2 BLANK OF TiO2-SiO2 GLASS FOR A MIRROR SUBSTRATE FOR USE IN EUV LITHOGRAPHY AND METHOD FOR THE PRODUCTION THEREOF
EUV TiO2-SiO2 BLANK OF TiO2-SiO2 GLASS FOR A MIRROR SUBSTRATE FOR USE IN EUV LITHOGRAPHY AND METHOD FOR THE PRODUCTION THEREOF
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机译：用于EUV光刻的镜面材料用TiO2-SiO2玻璃的EUV TiO2-SiO2毛坯及其生产方法
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摘要
In order to provide a blank of TiO 2 -SiO 2 glass for a mirror substrate for use in EUV lithography, an adaptation is required to optimize the progress of the coefficient of thermal expansion, and consequently also a zero crossing temperature T ZC TiO 2 -SiO 2 glass has an average value of the imaginary temperature T f in the range between 920 ° C and 970 ° C, and the zero point with respect to the imaginary temperature T f expressed as the differential coefficient dT ZC / dT f The dependence of the cross-over temperature T ZC is less than 0.3.
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机译：为了提供用于EUV光刻的镜面基板的TiO 2 -SiO 2 玻璃坯料，需要进行调整以优化热系数的进程膨胀，因此零交叉温度T ZC TiO 2 -SiO 2 玻璃具有虚温T 的平均值f 在920°C和970°C之间的范围内，相对于虚温T f 的零点表示为微分系数dT ZC / dT f 穿越温度T ZC 的依赖性小于0.3。
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