首页> 外国专利> SELECTIVE RECESSED REFERENCE PLANE STRUCTURE IN MODULE TAP AREA OF MEMORY MODULE AND METHOD FOR FORMING SELECTIVE REFERENCE RECESSED REFERENCE PLANE THEREBY

SELECTIVE RECESSED REFERENCE PLANE STRUCTURE IN MODULE TAP AREA OF MEMORY MODULE AND METHOD FOR FORMING SELECTIVE REFERENCE RECESSED REFERENCE PLANE THEREBY

机译:存储器模块的模块化TAP区域中的选择性后退参考平面结构及其形成选择性参考后退参考平面的方法

摘要

Disclosed is a memory module including: a signal tap and a power tap which are disposed apart from each other on a surface layer of a substrate; and a reference plane layer which is disposed at the lower part of the surface layer by interposing an insulating layer. The shape of the reference plane layer in a module tap region of the memory module is recessed at the lower part of the signal tap but non-recessed at the lower part of the power tap, so signal integrity (SI) and power integrity (PI) are improved together.;COPYRIGHT KIPO 2015
机译:公开了一种存储模块,包括:信号抽头和电源抽头,它们在基板的表层上彼此分开地设置;参考平面层通过插入绝缘层而设置在表面层的下部。存储模块的模块抽头区域中的参考平面层的形状在信号抽头的下部凹陷,但在电源抽头的下部不凹陷,因此信号完整性(SI)和电源完整性(PI) )一起改进。; COPYRIGHT KIPO 2015

著录项

  • 公开/公告号KR20150100388A

    专利类型

  • 公开/公告日2015-09-02

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20140022140

  • 发明设计人 KIM DONG YEOPKR;LEE JAE JUNKR;

    申请日2014-02-25

  • 分类号H01L23/50;

  • 国家 KR

  • 入库时间 2022-08-21 14:59:20

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