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High-efficiency blue InGaN/GaN quantum-well light-emitting diodes with saw-like later
High-efficiency blue InGaN/GaN quantum-well light-emitting diodes with saw-like later
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机译：高效的蓝色InGaN / GaN量子阱发光二极管，后期呈锯齿状
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摘要
The present invention relates to a high efficiency blue InGaN / GaN quantum well LED with a sawtooth layer wherein the luminescent properties of the sawtooth InGaN / GaN quantum well (QW) LEDs are investigated using multi-band effective mass theory, The spontaneous emission peak of the QW structure is improved compared to the conventional quantum well (QW) structure because the matrix element is improved in the inclusion of the sawtooth layer, and also in the case of the sawto-type quantum well (QW) structure, Since the internal field effect is reduced due to the polarization, the transition energy becomes a weak function of the carrier density and the built-in electric field effect can be reduced. In addition, a method using a substrate having a non-directional (0001) orientation or an InGaN well , A method of injecting an AlGaNδ layer into a thick InGaN well and a method of using a four layer AlInGaN barrier to reduce the internal field effect, Ground quantum well (QW) is a useful invention that has particular advantages for non room (非 正方) achieve high efficiency of the quantum well (QW) structure by a method similar to the preparation of the structure.
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