首页> 外国专利> DUMMY BARRIER LAYER FEATURES FOR PATTERNING OF SPARSELY DISTRIBUTED METAL FEATURES ON THE BARRIER WITH CMP

DUMMY BARRIER LAYER FEATURES FOR PATTERNING OF SPARSELY DISTRIBUTED METAL FEATURES ON THE BARRIER WITH CMP

机译:CMP栅栏上稀疏分布金属特征的虚拟栅栏层特征

摘要

A semiconductor device comprises a plurality of device features formed on a substrate and a plurality of dummy features formed on the substrate and across an open region between the device features. Adjacent device features are spaced apart by a distance of 100 microns or more. Each device feature includes a barrier island and a metal layer on top of the barrier island. Each dummy feature has a structure that corresponds to the structure of the barrier island. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
机译:半导体器件包括形成在衬底上的多个器件特征以及形成在衬底上并且跨过器件特征之间的开放区域的多个虚设特征。相邻的设备部件之间的距离为100微米或更大。每个设备功能部件都包括一个隔离岛和位于隔离岛顶部的金属层。每个虚拟特征都具有与势垒岛的结构相对应的结构。提供该摘要以符合要求摘要的规则,该摘要将允许搜索者或其他阅读者快速确定技术公开的主题。提交本文档时应理解为不会将其用于解释或限制权利要求的范围或含义。

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