首页> 外国专利> METHOD FOR CHECKING THE TEMPERATURE DEPENDENCE OF THE BROADNESS OF FORBIDDEN BAND AND THE FUNCTION OF INTENSITY OF LUMINESCENCE IN FREE EXCITON RECOMBINATION FOR GE, AT TEMPERATURES OF UP TO 400 K USING THE EXPONENTIAL DEVELOPMENT IN TAYLOR SERIES

METHOD FOR CHECKING THE TEMPERATURE DEPENDENCE OF THE BROADNESS OF FORBIDDEN BAND AND THE FUNCTION OF INTENSITY OF LUMINESCENCE IN FREE EXCITON RECOMBINATION FOR GE, AT TEMPERATURES OF UP TO 400 K USING THE EXPONENTIAL DEVELOPMENT IN TAYLOR SERIES

机译：利用泰勒级数指数展开法测定GE在自由激子复合中禁带辉度的温度依赖性和光强强度函数的方法，温度高达400 K

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摘要

The invention relates to a method for checking the temperature dependence of the energy of the forbidden band for Ge and the function of the luminescence of annihilation of free excitons by which a development in Taylor series of the exponential of the function of the luminescence of annihilation of free excitons is provided, where the energy dependence of the broadness of the forbidden band is introduced and the experimental data are adjusted for temperatures ranging between 300 K and 400 K, corrections being taken into account for lower temperatures.

机译：本发明涉及一种检查Ge的禁带能量的温度依赖性和自由激子an灭的发光函数的方法，通过该方法泰勒级数发展了of灭的发光函数的指数。提供了自由激子，其中引入了禁带宽度的能量依赖性，并针对300 K至400 K之间的温度调整了实验数据，并考虑了较低温度的校正。

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公开/公告号RO130131A2

专利类型
公开/公告日2015-03-30

原文格式PDF
申请/专利权人 DOMOKOS &SCEDIL;TEFAN;
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申请/专利号RO20130000551
发明设计人 DOMOKOS SCEDIL;TEFAN;
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申请日2013-07-23
分类号G01N21/64;G01N21/71;
国家 RO
入库时间 2022-08-21 15:13:11

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