SOI bipolar junction transistor with substrate bias voltages

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• 2. SiC双极结型晶体管的制造方法及其SiC双极结型晶体管 [P] . 中国专利： CN103180956A . 2013-06-26
• 3. SOI bipolar junction transistor with substrate bias voltages [P] . 美国专利： US9171924B2 . 2015-10-27

  机译： 具有衬底偏置电压的SOI双极结型晶体管

• 4. SOI BIPOLAR JUNCTION TRANSISTOR WITH SUBSTRATE BIAS VOLTAGES [P] . 美国专利： US2015008977A1 . 2015-01-08

  机译： 具有基极偏置电压的SOI双极结型晶体管

• 5. SOI BIPOLAR JUNCTION TRANSISTOR WITH SUBSTRATE BIAS VOLTAGES [P] . 美国专利： US2013200942A1 . 2013-08-08

  机译： 具有基极偏置电压的SOI双极结型晶体管

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