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首页> 外国专利> Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element

Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element

机译：外延生长用基板，GaN基半导体膜的制造方法，GaN基半导体膜，GaN基半导体发光元件和GaN基半导体发光元件的制造方法

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摘要

A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.
机译：本发明的用于外延生长的基板包括：单晶部分，其至少在表面层部分中包括与GaN基半导体不同的材料;以及单晶部分。作为用于外延生长的表面的不平坦表面包括多个凸部，所述多个凸部被布置为使得每个凸部在彼此相差120度的方向上具有三个其他最接近的凸部，并且每个均具有多个生长空间。凸部被六个凸部围绕，其中单晶部分至少暴露在生长空间上，这使得c轴取向的GaN基半导体晶体能够从生长空间生长。

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