首页> 外国专利> Method of manufacturing multi-wavelengths distributed feedback (DFB) laser array including top separate confinement layer having different thickness laser units on the quantum-well layer grown by selective area epitaxial growth

Method of manufacturing multi-wavelengths distributed feedback (DFB) laser array including top separate confinement layer having different thickness laser units on the quantum-well layer grown by selective area epitaxial growth

机译:一种制造多波长分布式反馈(DFB)激光器阵列的方法,该阵列包括在通过选择性区域外延生长而生长的量子阱层上具有不同厚度的激光单元的顶部分离的限制层

摘要

A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.
机译:一种用于制造分布式反馈激光器阵列的方法,包括:在衬底上形成底部分离的限制层;以及在所述衬底上形成底部限制层。在底部分离的限制层上形成量子阱层;在量子阱层上形成选择性区域外延介质掩模图案;使用选择区域外延介质掩模图案通过选择区域外延生长在量子阱层上形成顶部分离限制层,所述顶部分离限制层对于不同的激光单元具有不同的厚度;去除选择性区域外延介质掩模图案;在顶部分离的限制层上形成光栅;在该光栅上生长接触层。本公开对于不同的激光器单元实现了不同的发射波长,而没有显着影响量子阱材料的发射性能。

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