Topological insulator structure having magnetically doped topological insulator quantum well film

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• 3. Electrical device having magnetically doped topological insulator quantum well film [P] . 美国专利： US9159909B2 . 2015-10-13

  机译： 具有磁掺杂拓扑绝缘子量子阱膜的电气装置

• 4. Electrical device having magnetically doped topological insulator quantum well film [P] . 美国专利： US9142760B2 . 2015-09-22

  机译： 具有磁掺杂拓扑绝缘子量子阱膜的电气装置

• 5. Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure [P] . 美国专利： US9806710B2 . 2017-10-31

  机译： 具有拓扑绝缘体/磁绝缘体异质结构的压控磁性设备

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• 1. MoS_(2) on topological insulator Bi_(2)Te_(3) thin films:Activation of the basal plane for hydrogen reduction [J] . Guowei Lia ,Jue Huang ,Qun Yang . 能源化学:英文版 . 2021,第11期
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