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2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
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机译：由具有复合肖特基/欧姆电极结构的氮化物材料形成的2DEG肖特基二极管及其制造方法
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摘要
A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed.
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