Silicon oxynitride film formation method and substrate equipped with silicon oxynitride film formed thereby

• 1. 通过化学汽相淀积使氮化硅膜和/或氧氮化硅膜淀积的方法 [P] . 中国专利： CN101466865A . 2009-06-24
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• 3. SILICON OXYNITRIDE FILM FORMATION METHOD AND SUBSTRATE EQUIPPED WITH SILICON OXYNITRIDE FILM FORMED THEREBY [P] . 美国专利： US2014127630A1 . 2014-05-08

  机译： 硅氧氮化物膜的形成方法及由此形成的硅氧氮化物膜的基质

• 4. Silicon Oxynitride Film Formation Method and Substrate Equipped with Silicon Oxynitride Film Formed Thereby [P] . 美国专利： US2013164690A1 . 2013-06-27

  机译： 氮氧化硅膜的形成方法以及形成有氮氧化硅膜的基板

• 5. METHOD FOR FORMING SILICON OXYNITRIDE FILM AND SUBSTRATE HAVING SILICON OXYNITRIDE FILM PRODUCED USING THIS FORMATION METHOD [P] . 韩国专利： KR101736888B1 . 2017-05-17

  机译： 形成硅氧化膜的方法和使用该形成方法生产的具有硅氧化膜的基质

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