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Apparatus and Method for Removing Challenging Polymer Films and Structures from Semiconductor Wafers

机译:从半导体晶片上去除具有挑战性的聚合物膜和结构的设备和方法

摘要

The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence.
机译:本设备和方法被配置为从半导体晶片上去除具有挑战性的聚合物膜和结构。该技术涉及使用具有独特参数的双重浸泡和喷雾顺序,并且可以根据应用进行更改。最初的浸渍步骤用于引发聚合物的溶胀和溶解。第一喷涂步骤可以包括高压针以刺穿顶层,从而允许更多的溶剂在随后的浸泡过程中渗透。然后,第二次浸渍可以进一步更快地渗透,从而使聚合物被溶剂充分渗透。最终进行高压喷涂以去除所有聚合物涂层。该过程以最后的漂洗和干燥程序结束。

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