首页>
外国专利>
Silicon wafer and a silicon epitaxial wafer having a polycrystal silicon layer formed on a major surface including boron concentration of the polycrystal silicon layer being 1×1015 atom/cm3 or less
Silicon wafer and a silicon epitaxial wafer having a polycrystal silicon layer formed on a major surface including boron concentration of the polycrystal silicon layer being 1×1015 atom/cm3 or less
展开▼
机译：具有在多晶硅层的硼浓度为1×10 15 原子/ cm 3
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×1010 atoms/cm2 or less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/m3 or less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.
展开▼
机译：提供了一种硅晶片及其制造工艺，该硅晶片的质量稳定且对器件特性没有不利影响并且通过限制来自环境的硼污染而制造。具体地，硅晶片的特征在于其上附着的硼量为1×10 10 原子/ cm 2 或更小。为了制造这样的晶片，该晶片包含附着在晶片表面上的少量硼，该晶片在硼浓度为15 ng / m 3 或更小的气氛中进行处理。无硼过滤器和硼吸附过滤器被用作洁净室等中的过滤器，以降低大气中的硼浓度。
展开▼
