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Methods for Forming Crystalline IGZO Through Processing Condition Optimization

机译：通过工艺条件优化形成结晶IGZO的方法

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摘要

Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A layer is formed above the substrate using a PVD process. The layer includes indium, gallium, zinc, or a combination thereof. The PVD process is performed in a gaseous environment having a pressure of between about 1 mT and about 5 mT and including between about 20% and about 100% oxygen gas. The PVD process may be performed at a processing temperature between about 25° C. and about 400° C. The duty cycle of the PVD process may be between about 70% and about 100%.

机译：本文描述的实施例提供了用于形成晶体铟镓锌氧化物（IGZO）的方法。提供了基板。使用PVD工艺在衬底上方形成层。该层包括铟，镓，锌或其组合。 PVD工艺在具有约1mT至约5mT之间的压力且包括约20％至约100％之间的氧气的气体环境中进行。 PVD工艺可以在约25℃至约400℃之间的处理温度下执行。PVD工艺的占空比可以在约70％至约100％之间。

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公开/公告号US2015179446A1

专利类型
公开/公告日2015-06-25

原文格式PDF
申请/专利权人 LG DISPLAY CO. LTD.;INTERMOLECULAR INC.;
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申请/专利号US201314137749
发明设计人 MIN-CHEOL KIM;STUART BRINKLEY;WOOSUP SHIN;SEON-MEE CHO;YOON-KYUNG CHANG;SANG LEE;KWON-SIK PARK;
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申请日2013-12-20
分类号H01L21/02;H01L29/66;H01L29/786;
国家 US
入库时间 2022-08-21 15:24:49

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