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DETERMINING AND STORING BIT ERROR RATE RELATIONSHIPS IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY (STT-MRAM)
DETERMINING AND STORING BIT ERROR RATE RELATIONSHIPS IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY (STT-MRAM)
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机译：确定和存储自旋传递扭矩磁阻随机存取存储器（STT-MRAM）中的位错误率关系
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摘要
Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method may include determining a performance characteristic using relationship information that relates a bit error rate to at least one of a programming pulse width, a temperature, a history-based predictive performance parameter , a coding scheme, and a voltage level also associated with a memory. The performance characteristic is stored and used to manage a write operation associated with the memory.
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