Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region

• 1. 包括具有与应力层相邻的有源区的晶体管结构的电子器件以及用于形成该电子器件的工艺 [P] . 中国专利： CN101305457A . 2008-11-12
• 2. 具有包含InGaN的有源区的半导体结构体、形成此类半导体结构体的方法以及由此类半导体结构体形成的发光器件 [P] . 中国专利： CN105051918A . 2015-11-11
• 3. Semiconductor device with epitaxially grown active layer adjacent an optically passive region [P] . 英国专利： GB2507513A . 2014-05-07

  机译： 具有在光学无源区域附近外延生长的有源层的半导体器件

• 4. A method of manufacturing a semiconductor device having a semiconductor layer epitaxially grown from an active region without a short circuit on a field insulating layer [P] . 韩国专利： KR19980042638A . 1998-08-17

  机译： 一种制造具有从有源区外延生长的半导体层且在场绝缘层上没有短路的半导体器件的方法

• 5. METHOD AND DEVICE FOR EVALUATING SURFACE ROUGHNESS OF EPITAXIAL GROWN LAYER, METHOD AND INSTRUMENT FOR MEASURING REFLECTION FACTOR OF EPITAXIAL GROWN LAYER, AND MANUFACTURE OF SEMICONDUCTOR DEVICE [P] . 日本专利： JPH11148812A . 1999-06-02

  机译： 评估外延生长层表面粗糙度的方法和装置，测量外延生长层反射因子的方法和仪器以及半导体装置的制造

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