首页> 外国专利> Extreme UV lithography system used for performing miniaturization of e.g. semiconductor wafers, has electron switch that is arranged between accelerator unit and undulator unit, for directing electron beam alternately to undulators

Extreme UV lithography system used for performing miniaturization of e.g. semiconductor wafers, has electron switch that is arranged between accelerator unit and undulator unit, for directing electron beam alternately to undulators

机译：极端紫外线光刻系统，用于执行例如半导体晶片，具有电子开关，该电子开关布置在加速器单元和起伏器单元之间，用于将电子束交替引导到起伏器

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摘要

The system has a free-electron laser unit (1) that generates an electron beam. An accelerator unit (2) is provided for accelerating the electron beam. An undulator unit (5) is provided for generating EUV light. A lithography unit (6) is provided for exposing wafers. The undulator unit is provided with two undulators (51,52) spaced apart and associated with the lithography unit. An electron switch (4) is arranged between the accelerator unit and the undulator unit, for directing the electron beam alternately to undulators.

机译：该系统具有产生电子束的自由电子激光器单元（1）。提供加速器单元（2）以加速电子束。提供了用于产生EUV光的波荡器单元（5）。提供用于曝光晶片的光刻单元（6）。波荡器单元设置有两个间隔开并与光刻单元相关联的波荡器（51，52）。在加速器单元和波荡器单元之间布置有电子开关（4），用于将电子束交替地引向波荡器。

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公开/公告号DE102013211830A1

专利类型
公开/公告日2014-06-12

原文格式PDF
申请/专利权人 CARL ZEISS SMT GMBH;
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申请/专利号DE201310211830
发明设计人 PATRA MICHAEL;
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申请日2013-06-21
分类号G03F7/20;H05H15/00;G21K5/00;
国家 DE
入库时间 2022-08-21 15:37:12

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