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Laser annealing - or - annealing systems and methods with ultra-short residence - and / or holding times
Laser annealing - or - annealing systems and methods with ultra-short residence - and / or holding times
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机译：具有超短停留时间和/或保持时间的激光退火或退火系统和方法
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摘要
Laser annealing - or - annealing systems and methods for annealing or annealing of a semiconductor wafer with ultra-short believe - and / or residence times are disclosed. The laser annealing - or - annealing systems may comprise one or two laser beams, the at least partially overlapping. One of the laser beams is a preheating laser beam and the other laser beam is the annealing - or annealing laser beam. The annealing - or annealing laser beam scans sufficiently quickly, so that the holding - or residence time in the range from about 1 μs to about 100 μs is. These ultrashort residence - and / or holding times can be used for annealing - or annealing product wafer, formed from thin device wafers, since they prevent the side of the device wafer by means of heat during the annealing - or annealing process is damaged. Embodiments of individual laser beam annealing - or - annealing systems and - the method are likewise discloses.
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