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SOL-GEL METHOD OF FORMING FERROELECTRIC STRONTIUM-BISMUTH-TANTALUM OXIDE FILM

机译:形成铁电锶-铋-钽氧化物薄膜的溶胶-凝胶法

摘要

FIELD: physics.;SUBSTANCE: invention relates to semiconductor micro- and nanoelectronics and specifically to a sol-gel technique of producing ferroelectric strontium-bismuth-tantalum oxide thin films on integrated circuits, which are used in nonvolatile FRAM. The technical result of the invention is ensuring homogeneity of the obtained ferroelectric film, easy monitoring of the sol preparation process and longer shelf life of the initial sol, low power consumption of the process and low cost thereof. The sol-gel method of forming a ferroelectric strontium-bismuth-tantalum oxide film involves preparation of starting solutions of strontium chloride, bismuth chloride and tantalum chloride. Each obtained solution undergoes ultrasonic treatment for 20-40 minutes, held for a day at room temperature and then filtered. The solution are mixed into one solution and then held for a day at room temperature. A film-forming solution is obtained, which is deposited on a substrate. The substrate with the film-forming solution is dried at 50-450°C and the film is annealed in the presence of oxygen at 700-800°C for 1-2 hours.;EFFECT: obtaining a ferroelectric strontium-bismuth-tantalum oxide film.;5 dwg
机译:技术领域本发明涉及半导体微电子和纳米电子学,尤其涉及在集成电路上生产用于非易失性FRAM的铁电锶-铋-钽氧化物薄膜的溶胶-凝胶技术。本发明的技术结果是确保获得的铁电薄膜的均匀性,易于监控溶胶制备过程,并延长了初始溶胶的保质期,该过程的功耗低且成本低。形成铁电锶-铋-钽氧化物薄膜的溶胶-凝胶法涉及制备氯化锶,氯化铋和氯化钽的起始溶液。将每种获得的溶液进行超声处理20-40分钟,在室温下放置一天,然后过滤。将溶液混合成一种溶液,然后在室温下放置一天。获得成膜溶液,其沉积在基板上。具有成膜溶液的基材在50-450°C下干燥,并在氧气存在下于700-800°C下将膜退火1-2小时;效果:获得铁电锶-铋-钽氧化物电影; 5 dwg

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