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METHOD OF MANUFACTURING SOLAR CELL INCLUDING CRYSTALLIZING PROCESS FOR LARGE AREA USING ELECTRON BEAM FOR P-TYPE SILICON THIN FILM FORMED BY PHYSICAL VAPOR DEPOSITION AND SOLAR CELL MANUFACTURED BY THE SAME
METHOD OF MANUFACTURING SOLAR CELL INCLUDING CRYSTALLIZING PROCESS FOR LARGE AREA USING ELECTRON BEAM FOR P-TYPE SILICON THIN FILM FORMED BY PHYSICAL VAPOR DEPOSITION AND SOLAR CELL MANUFACTURED BY THE SAME
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机译：利用电子束物理气相沉积成型的p型硅薄膜制造包含大面积晶体化工艺的太阳能电池的方法
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摘要
The present invention relates to a method of manufacturing a solar cell including a crystalizing process for large area using an electron beam for a P-type silicon which has a high crystallinity fraction and a large crystal grain so as to manufacture a thin film formed by a physical vapor deposition in a short period of time and a solar cell manufactured by thereof. The method of manufacturing the solar cell including the crystalizing process for large area using the electron beam for the P-type silicon according to the present invention comprises a step of preparing for a substrate, a step of depositing a first amorphous silicon layer by depositing the amorphous silicon layer on to the substrate by a physical vapor deposition, a step of forming a first polycrystalline silicon layer by crystalizing the first polycrystalline silicon layer by irradiating an electron beam to the first amorphous silicon layer, a step of depositing a second amorphous silicon layer onto the first polycrystalline silicon layer by the physical vapor deposition, and a step of forming a second polycrystalline silicon layer by crystalizing the second polycrystalline silicon layer by irradiating an electron beam to the second amorphous silicon layer. The electron beam is manufactured by a linear scanning process in which the beam is formed by making linear reciprocating movements on the first and second amorphous silicon layers. [Reference numerals] (S1) Preparation of substrate; (S2) Evaporation of silicon layer of first amorphous; (S3) Forming first polycrystalline silicon layer by electronic beam irradiation; (S4) Etching second polycrystalline silicon layer; (S5) Forming second polycrystalline silicon layer by electronic beam irradiation; (S6) Forming doping layer; (S7) Forming electrode
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