Method of preparing cadmium telluride nanowire using solution synthesis and the cadmium telluride nanowire by the same

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• 3. METHOD OF PREPARING CADMIUM TELLURIDE NANOWIRE USING SOLUTION SYNTHESIS AND THE CADMIUM TELLURIDE NANOWIRE BY THE SAME [P] . 韩国专利： KR20130094599A . 2013-08-26

  机译： 溶液合成制备碲化镉纳米的方法和相同方法制备碲化镉纳米

• 4. Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer [P] . 欧洲知识产权局专利： EP2398045A3 . 2013-10-23

  机译： 改性碲化镉层，改性碲化镉层的方法以及具有碲化镉层的薄膜装置

• 5. Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer [P] . AU2011202691A1 . 2012-01-19

  机译： 改性碲化镉层，改性碲化镉层的方法以及具有碲化镉层的薄膜装置

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