首页> 外国专利> Etching solution for two layer of copper/molybdenum or three layer of molybdenum/copper/molybdenum without damage of glass substrate

Etching solution for two layer of copper/molybdenum or three layer of molybdenum/copper/molybdenum without damage of glass substrate

机译:两层铜/钼或三层钼/铜/钼的蚀刻溶液,不会损坏玻璃基板

摘要

liquid crystal display of the TFT (Thin Film Transitor) a configuration in which the gate (Gate), the source (Source) and drain (Drain) electrode for a photoresist (Photoresist) coating the exposed after etching to etch composition for thin film transistor liquid crystal display device that makes it possible to obtain a desired pattern (Pattern) is a metal wiring material is disclosed. Due to this etching composition is based on the total weight of the composition, 5 to 20% by weight hydrogen peroxide, 0.1 to 5% by weight etchant, a chelating agent 0.1 to 5% by weight, 0.1 to 5% by weight ammonium compound, 0.01 to 2 azole compound % by weight and the total weight including the water to be 100% by weight. The pH of this etching composition is adjusted to 1.0 to 3.5. According to the present invention, a copper / molybdenum film or a molybdenum / copper / molybdenum tunica media of the batch 3, as well as eliminate the poor etching is possible, the possibility that may be caused by the etching of the glass substrate by a fluoride while the residue does not occur, the process for the etch rate, etch and has the right amount and the right taper angle of inclination (Taper Angle). ;
机译:TFT(薄膜晶体管)的液晶显示器,其中在蚀刻以蚀刻用于薄膜晶体管的组合物之后,暴露用于光刻胶(光致抗蚀剂)的栅极(栅极),源极(源极)和漏极(漏极)电极的结构公开了一种能够获得期望的图案(图案)的液晶显示装置是金属布线材料。由于该蚀刻组合物基于组合物的总重量,所以5至20重量%的过氧化氢,0.1至5重量%的蚀刻剂,螯合剂0.1至5重量%,0.1至5重量%的铵化合物。 0.01重量%至2重量%的唑化合物和包括水在内的总重量为100重量%。将该蚀刻组合物的pH调整为1.0〜3.5。根据本发明,批次3的铜/钼膜或钼/铜/钼膜介质以及消除不良的蚀刻是可能的,该可能性可能是由玻璃基板的蚀刻引起的。氟化物而不会出现残留物时,该过程用于刻蚀速率,刻蚀并具有正确的数量和正确的锥度倾斜角(锥角)。 ;

著录项

  • 公开/公告号KR101339316B1

    专利类型

  • 公开/公告日2013-12-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110042860

  • 发明设计人 송용성;이창호;이태형;

    申请日2011-05-06

  • 分类号C09K13/04;G03F7/34;

  • 国家 KR

  • 入库时间 2022-08-21 15:44:07

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