首页>
外国专利>
COMPOUND SEMICONDUCTOR SINGLE CRYSTALS FOR PHOTOELECTRIC CONVERSION ELEMENTS, PHOTOELECTRIC CONVERSION ELEMENT, AND PRODUCTION METHOD FOR COMPOUND SEMICONDUCTOR SINGLE CRYSTALS FOR PHOTOELECTRIC CONVERSION ELEMENTS
COMPOUND SEMICONDUCTOR SINGLE CRYSTALS FOR PHOTOELECTRIC CONVERSION ELEMENTS, PHOTOELECTRIC CONVERSION ELEMENT, AND PRODUCTION METHOD FOR COMPOUND SEMICONDUCTOR SINGLE CRYSTALS FOR PHOTOELECTRIC CONVERSION ELEMENTS
展开▼
机译：光电转换元件用复合半导体单晶，光电转换元件以及光电转换元件用复合半导体单晶的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant container is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4 × 1015 cm-3 to 1 × 1018 cm-3 are produced in this manner. Using a substrate (2) that has been cut out from the compound semiconductor single crystals for photoelectric conversion elements enables the conversion efficiency of a photoelectric conversion element (10) to be increased.
展开▼
机译：本发明提高了使用碲化镉锌或碲化镉（Cd（Zn）Te）化合物半导体单晶并含有1A族元素作为杂质的光电转换元件的转换效率。在耐热容器中填充原料和与一部分原料反应的1A族元素，然后对该容器进行加热，将原料熔融成熔融液，将解离的1A族元素扩散到耐热容器中。熔体，从熔体中产生单晶。用于光电转换元件的化合物半导体单晶，其空穴浓度为4×10 15 cm -3 至1×10 18 cm -3 以这种方式产生。使用从化合物半导体单晶切出的基板（2）作为光电转换元件，可以提高光电转换元件（10）的转换效率。
展开▼
