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METHOD FOR LOW TEMPERATURE GROWTH OF INORGANIC MATERIALS FROM SOLUTION USING CATALYZED GROWTH AND RE-GROWTH

机译:催化生长和再生长从溶液中低温还原无机材料的方法

摘要

The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemically treating a substrate to activate it for growth of the silicon oxide. (b) Immersing the treated substrate into a bath with a reactive solution. (c) Regenerating the reactive solution to allow for continued growth of the silicon oxide. In another embodiment of the present invention, the apparatus includes a first container holding a reactive solution, a substrate on which the silicon oxide is deposited, a second container holding silica, and a means for adding silica to the reactive solution.
机译:本发明涉及一种方法和设备,该方法和设备用于在低温下将氧化硅从溶液中沉积到基板上,从而产生均匀的氧化硅生长。该方法通常包括以下步骤:(a)化学处理衬底以使其活化以生长氧化硅。 (b)将处理过的基材浸入具有反应性溶液的浴中。 (c)再生反应溶液以允许氧化硅的持续生长。在本发明的另一个实施方案中,该设备包括容纳反应溶液的第一容器,其上沉积有氧化硅的基底,容纳二氧化硅的第二容器和用于将二氧化硅添加到反应溶液中的装置。

著录项

  • 公开/公告号EP1579490B1

    专利类型

  • 公开/公告日2014-05-14

    原文格式PDF

  • 申请/专利权人 UNIV RICE WILLIAM M;

    申请/专利号EP20030786878

  • 发明设计人 BARRON ANDREW R.;WHITSITT ELIZABETH ANNE;

    申请日2003-11-18

  • 分类号H01L21/31;H01L21/76;

  • 国家 EP

  • 入库时间 2022-08-21 15:51:55

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