COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING FERROELECTRIC THIN FILM, FERROELECTRIC THIN FILM, AND COMPLEX ELECTRONIC COMPONENT

• 1. 铁电薄膜形成用组合物、铁电薄膜的形成方法及铁电薄膜 [P] . 中国专利： CN102219507B . 2014.12.03
• 2. 铁电薄膜形成用组合物、铁电薄膜的形成方法及铁电薄膜 [P] . 中国专利： CN102219507A . 2011-10-19
• 3. Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, ferroelectric thin film, and complex electronic component [P] . 欧洲知识产权局专利： EP2642510A3 . 2014-03-05

  机译： 铁电薄膜形成用组合物，铁电薄膜形成方法，铁电薄膜和复合电子部件

• 4. Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, ferroelectric thin film, and complex electronic component [P] . 欧洲知识产权局专利： EP2642510A2 . 2013-09-25

  机译： 铁电薄膜形成用组合物，铁电薄膜形成方法，铁电薄膜和复合电子部件

• 5. COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING FERROELECTRIC THIN FILM, FERROELECTRIC THIN FILM, AND COMPLEX ELECTRONIC COMPONENT [P] . 美国专利： US2013136937A1 . 2013-05-30

  机译： 形成铁电薄膜的组合物，形成铁电薄膜的方法，铁电薄膜和复合电子元件

• 1. Preparation of Lead-based Perovskite Structure Ferroelectric Thin Films by Sol-Gel Method and the Properties of the Films [J] . 高技术通讯：英文版 . 1995,第001期
• 2. Electrical properties of ferroelectric Pb(Zr,Ti)O{sub}3 thin films formed by metalorganic decomposition [J] . Shigehiro Nakamura, Hisashi Fukuda, Shigeru Nomura 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2000,第272期
• 3. Electrical properties of ferroelectric PbTiO{sub}3 thin films formed by metalorganic decomposition [J] . Hiromitsu Yogo, Hisashi Fukuda, Shigeru Nomura 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2000,第272期
• 4. Electrical properties of ferroelectric Pb(Zr,Ti)O{sub}3 thin films formed by metalorganic decomposition [J] . Shigehiro Nakamura, Hisashi Fukuda, Shigeru Nomura 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2000,第272期
• 5. Miniaturization and enhancement performance of passive microwave components using HTS and thin film ferroelectric materials [C] . Siddig Gomha, Suliman Abdalla, Khalid M. Ibrahim, 2015 International Conference on Computing, Control, Networking, Electronics and Embedded Systems Engineering . 2015
• 6. Probing the effects of defects on ferroelectricity in ferroelectric thin films. [D] . Zhu, Lin. 2016
• 7. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films [O] . Peixian Miao, Yonggang Zhao, Nengneng Luo, -1
• 8. Interplay Between Thin Film Ferroelectric Composition, Microstructure and Microwave Phase Shifter Performance [O] . Alterovitz Samuel A., Mueller Carl H., Miranda Felix A., 2003

• 1. THE STABILITY INVESTIGATION OF FERROELECTRIC SrBi_2Ta_2O_9 THIN FILMS ANNEALED IN FORMING GAS [J] . T. Yu ,D.S. Wang ,D. Wu . 金属学报：英文版 . 2002,第1期
• 2. FERROELECTRIC CHARACTERISTICS OF SrBi_2Ta_2O_9 THIN FILMS ANNEALED IN FORMING GAS [J] . D.S. Wang T. Yu and A. Hu (Department of Physics National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093 China) D. Wu A.D. Li Z.G. Liu and N.B. Ming (Department of Material Science and Engineering National Laboratory . 金属学报：英文版 . 2001,第6期
• 3. Properties of Phase Transformation of Ferroelectric Thin Films with Surface Layers [J] . Lian Cui ,Xu Xu ,JiXin Che . 现代物理（英文） . 2011,第9期
• 4. Effect of La Doping on Microstructure and Ferroelectric Prop-erties of Bi_4Ti_3O_(12) Thin Films Prepared by Sol-gel Method [J] . 付承菊 . 武汉理工大学学报：材料科学英文版 . 2008,第5期
• 5. SOL-GEL方法制备PZT铁电薄膜新方法及铁电特性研究 [C] . 颜雷 ,汤庭鳌 ,黄维宁 . 第二届海内外中华青年学者材料科学技术研讨会暨第七届全国青年材料科学研讨会 . 2000
• 6. 铁电薄膜与组分梯度铁电薄膜的性能研究 [A] . 许名瑞 . 2008