Electrically programmable floating common gate CMOS device and applications thereof

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  机译： 电气可编程浮栅通用CMOS器件及其应用

• 4. Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general purpose CMOS technology with thick gate oxide [P] . 美国专利： US8320180B2 . 2012-11-27

  机译： 用于具有厚栅氧化层的通用CMOS技术的基于多时间可编程（MTP）PMOS浮栅的非易失性存储器件

• 5. MULTIPLE TIME PROGRAMMABLE (MTP) PMOS FLOATING GATE-BASED NON-VOLATILE MEMORY DEVICE FOR A GENERAL PURPOSE CMOS TECHNOLOGY WITH THICK GATE OXIDE [P] . 美国专利： US2011176368A1 . 2011-07-21

  机译： 基于通用栅极CMOS技术和厚氧化层的基于多重时间可编程（MTP）PMOS浮栅的非易失性存储器

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