首页> 外国专利> Apparatus for PECVD deposition of an internal barrier layer on a receptacle, the apparatus including an optical plasma analysis device

Apparatus for PECVD deposition of an internal barrier layer on a receptacle, the apparatus including an optical plasma analysis device

机译:在容器上进行PECVD沉积内部阻挡层的设备,该设备包括光学等离子体分析装置

摘要

An apparatus (1) for PECVD deposition of a thin layer of a barrier-effect material in a receptacle (3), the apparatus comprising: a structure (5) receiving the receptacle (3), said structure (5) defining a plasma-presence zone (18), said structure (5) being provided with an orifice (14) defining an axis (A1) and presenting an inside opening (15) opening out into the plasma-presence zone (18), and an outside opening (16) opening out outside said zone (18); an electromagnetic wave generator; and an optical plasma monitor device (19) including a pick-up (21) placed outside the plasma-presence zone (18) on the axis (A1) of said orifice.
机译:在容器( 3 )中用于PECVD沉积势垒材料薄层的设备( 1 ),该设备包括:结构( 5 )接收容器( 3 ),所述结构( 5 )定义了等离子体存在区域( 18 ),所述结构( 5 )设有孔( 14 ),该孔定义轴(A 1 )并具有内部开口( 15 < / B>)打开进入等离子体存在区域( 18 ),并向外打开一个外部开口( 16 )进入该区域( 18 >);电磁波发生器;光学等离子体监视器装置( 19 ),其包括放置在所述等离子体上的等离子体存在区域( 18 )外部的拾取器( 21 )。孔的轴线(A 1 )。

著录项

  • 公开/公告号US8826853B2

    专利类型

  • 公开/公告日2014-09-09

    原文格式PDF

  • 申请/专利权人 JEAN-MICHEL RIUS;GUY FEUILLOLEY;

    申请/专利号US20060995185

  • 发明设计人 GUY FEUILLOLEY;JEAN-MICHEL RIUS;

    申请日2006-07-12

  • 分类号C23C16/00;B05D7/22;H05H1/00;H05H1/24;C23C16/52;C23C16/04;

  • 国家 US

  • 入库时间 2022-08-21 16:02:13

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