An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface and a second surface. The second surface is substantially opposite the first surface. The first surface of the III-nitride emitter structure is coupled to a surface of the III-nitride base structure. The semiconductor also includes a first dielectric layer coupled to the second surface of the III-nitride emitter structure, and a spacer coupled to a sidewall of the III-nitride emitter structure and the surface of the III-nitride base structure. The semiconductor also includes a base contact structure with a III-nitride material coupled to the spacer, the surface of the III-nitride base structure, and the first dielectric layer, such that the first dielectric layer and the spacer are disposed between the base contact structure and the III-nitride emitter structure.
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