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Perovskite oxide film and ferroelectric film using the same, ferroelectric device, and method for manufacturing perovskite oxide film

机译：钙钛矿氧化物膜和使用该钙钛矿氧化物膜的铁电膜，铁电装置以及钙钛矿氧化物膜的制造方法

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摘要

A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 μm and includes a perovskite oxide represented by a general formula (P) given below:(K_1-w-x,A_w,B_x)(Nb_1-y-z,C_y,D_z)O₃ (P),where: 0w1.0, 0≦x≦0.2, 0≦y1.0, 0≦z≦0.2, 0w+x1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

机译：在基板上形成钙钛矿氧化物膜，其中该钙钛矿氧化物膜的平均膜厚度不小于5μm，并且包括由以下给出的通式（P）表示的钙钛矿氧化物：<？in-line-formulae description =“ In-line Formulae” end =“ lead”？>（（K _{1-wx ，A _{w ，B _{x ）（Nb _{1-yz ，C _{y ，D _{z ）O _{3 （P），<？in-line-formulae description =“在线公式” end =“ tail”？>其中：0 1的A位元素除K之外，B为A位元素，C为离子价为 5 的B位元素，D为B位元素，A至D是一种或多种金属元素。}}}}}}} 展开▼

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公开/公告号US8872413B2

专利类型

公开/公告日2014-10-28

原文格式PDF

申请/专利权人 FUJIFILM CORPORATION;TOKYO INSTITUTE OF TECHNOLOGY;
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申请/专利号US201313869613

发明设计人 HIROSHI FUNAKUBO;YUKIO SAKASHITA;TAKAHISA SHIRAISHI;HIRO EINISHI;MUTSUO ISHIKAWA;MINORU KUROSAWA;
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申请日2013-04-24

分类号H01L41/18;H01L41/187;C23C4/10;C23C26/00;C23C30/00;H01L21/02;H01L41/317;C23C28/04;C23C28/00;

国家 US

入库时间 2022-08-21 16:03:51

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