SUPERIOR STABILITY OF CHARACTERISTICS OF TRANSISTORS HAVING AN EARLY FORMED HIGH-K METAL GATE

• 1. 具有高频稳定性特性的射频晶体管封装以及形成具有高频稳定性特性的射频晶体管封装的方法 [P] . 中国专利： CN104396141A . 2015-03-04
• 2. 一种能在金属表面形成具有抗生物性和低气味冲击特性的高亲水、高耐蚀表面层的涂覆方法 [P] . 中国专利： CN1177987A . 1998-04-01
• 3. Superior stability of characteristics of transistors having an early formed high-K metal gate [P] . 美国专利： US8652917B2 . 2014-02-18

  机译： 具有早期形成的高K金属栅极的晶体管的特性的卓越稳定性

• 4. TRANSISTOR INCLUDING A HIGH-K METAL GATE ELECTRODE STRUCTURE FORMED PRIOR TO DRAIN/SOURCE REGIONS ON THE BASIS OF A SUPERIOR IMPLANTATION MASKING EFFECT [P] . 美国专利： US2011101427A1 . 2011-05-05

  机译： 基于优越注入效果的晶体管，包括在漏/源区之前形成的高k金属门电极结构

• 5. Superior integrity of high-k metal gate stacks by forming STI regions after gate metals [P] . 美国专利： US8609509B2 . 2013-12-17

  机译： 通过在栅极金属之后形成STI区域，高k金属栅极堆叠具有卓越的完整性

• 1. Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors [J] . 胡光喜, 王伶俐, 刘冉, 理论物理通讯：英文版 . 2010,第010期
• 2. Superior adsorption performance of graphitic carbon nitride nanosheets for both cationic and anionic heavy metals from wastewater [J] . Gang Xiao, Yaoqiang Wang, Shengnan Xu, 中国化学工程学报（英文版） . 2019,第002期
• 3. Preparation and operation characteristics of organic semiconductor transistor using thin film Al gate and copper phthalocyanine [J] . 哈尔滨工业大学学报（英文版） . 2006,第006期
• 4. Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique [J] . J.C. Liao, Y.K. Fang, Y.T. Hou, Thin Solid Films . 2008,第12期
• 5. Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High-k/Metal Gate Stack p-Type Metal-Oxide-Semiconductor Field Effect Transistors [J] . Motoyuki Sato, Takayuki Aoyama, Yasuo Nara, Japanese journal of applied physics . 2009,第4issue2期
• 6. The Influence Of Nitrogen Incorporation On Performance And Bias Temperature Instability Of Metal Oxide Semiconductor Field Effect Transistors With Ultrathin High-k Gate Stacks [J] . J. C. Liao, Y. K. Fang, C. H. Chen, Applied Physicsletters . 2008,第19期
• 7. Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate process [C] . McMahon W., Tian C., Uppal S., International Reliability Physics Symposium . 2013
• 8. Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies [D] . Khan, Faraz. 2020
• 9. High Performance Top-Gated Graphene Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-k Gate Dielectrics [O] . Dr. Lei Liao, Jingwei Bai, Yungchen Lin, -1
• 10. Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor [O] . Rahou F.Z., Bouazza A.G., Bouazza B. 2016

• 1. Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks [J] . Xinhua Zhu Jian-min Zhu Aidong Li Zhiguo Liu Naiben Ming . 材料科学技术：英文版 . 2009,第3期
• 2. Metal–insulator transition in few-layered GaTe transistors [J] . Xiuxin Xia ,Xiaoxi Li ,Hanwen Wang . 半导体学报：英文版 . 2020,第7期
• 3. 具有穿通基区的双极晶体管光探测器的噪声特性研究 [C] . 常玉春 ,罗海林 ,王玉琦 . 全国化合物半导体.微波器件和光电器件学术会议 . 2000
• 4. 具有高反射和高导电特性聚酰亚胺银复合薄膜的制备及其形成机理研究 [A] . 吴战鹏 . 2006