首页>
外国专利>
Dislocation reduction in non-polar III-nitride thin films
Dislocation reduction in non-polar III-nitride thin films
展开▼
机译：非极性III型氮化物薄膜的位错减少
展开▼
页面导航
摘要
著录项
相似文献
摘要
Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
展开▼
