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QUANTUM NANODOTS, TWO-DIMENSIONAL QUANTUM NANODOT ARRAY AS WELL AS SEMICONDUCTOR DEVICE USING THE SAME AND PRODUCTION METHOD THEREFOR

机译：量子纳米点，二维量子纳米点阵列以及使用其相同制造方法的半导体器件

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摘要

A quantum nanodot 3 is formed of a semiconductor and has an outer diameter in two-dimensional directions which is not more than twice a bore radius of an exciton in the semiconductor. A two-dimensional quantum nanodot array 1 has a structure that the quantum nanodots 3 are two-dimensionally and uniformly arranged with a spacing between the quantum nanodots 3 being 1 nm or more. The two-dimensional nanodot array 1 may include an intermediate layer 6 which is made of a semiconductor or an insulator and is filled between the quantum nanodot arrays 10. Since the quantum nanodots have high orientation and high density, a high quantum confinement effect is attained. Therefore, the quantum nanodot 3 made of Si produces direct transition type luminescence. It is possible to control an optical property and a transport property of the two-dimensional quantum nanodot array 10.

机译：量子纳米点 3 由半导体形成，并且在二维方向上的外径不大于半导体中激子的孔径半径的两倍。二维量子纳米点阵列 1 具有这样的结构：量子纳米点 3 被二维且均匀地排列，并且在量子纳米点 3 为1nm或更大。二维纳米点阵列 1 可以包括中间层 6 ，该中间层由半导体或绝缘体制成并且被填充在量子纳米点阵列 10 之间。 B>。由于量子纳米点具有高的取向性和高的密度，因此获得了高的量子限制效应。因此，由Si制成的量子纳米点 3 产生直接过渡型发光。可以控制二维量子纳米点阵列 10的光学性质和传输性质。 展开▼

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公开/公告号US2014116502A1

专利类型

公开/公告日2014-05-01

原文格式PDF

申请/专利权人 SEIJI SAMUKAWA;
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申请/专利号US201214125835

发明设计人 SEIJI SAMUKAWA;
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申请日2012-06-13

分类号H01L29/66;H01L31/0352;H01S5/343;

国家 US

入库时间 2022-08-21 16:06:14

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