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Noncontact determination of interface trap density for semiconductor-dielectric interface structures
Noncontact determination of interface trap density for semiconductor-dielectric interface structures
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机译：半导体-介电界面结构的界面俘获密度的非接触式确定
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摘要
Embodiments of the subject method and apparatus relate to a sequence of noncontact Corona-Kelvin Metrology that allows the determination and monitoring of interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, QC, onto the dielectric surface followed by determination of the contact potential difference, VCPD, as the material structure response. The V-Q characteristics obtained are used to extract the surface barrier, VSB, response related to the applied corona charge. An intersection of the VCPD-QC characteristic obtained in the dark with the VOX-QC characteristic representing the dielectric response is determined. The specific VSB-QC dependence surrounding the reference VFB value is obtained and the dielectric interface trap density and its spectrum is determined. A method and apparatus to quantify and separate trapped charge components is provided.
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机译：本方法和装置的实施例涉及一系列非接触电晕-开尔文计量学，其允许确定和监测介电/宽带隙半导体结构中的界面特性。该技术涉及在电介质表面上增量施加精确和测量量的电晕电荷Q C ，然后确定接触电势差V CPD 。材料结构响应。获得的V-Q特性用于提取与施加的电晕电荷有关的表面势垒V SB 。在黑暗中获得的V CPD -Q C 特征与V OX -Q C 特征的交集确定代表介电响应。获得围绕参考V FB 值的特定V SB -Q C 相关性，并确定介电界面陷阱密度及其光谱。提供了一种量化和分离捕获的电荷成分的方法和设备。
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