Schottky barrier quantum well resonant tunneling transistor

• 1. 高集成度L形栅控肖特基势垒隧穿晶体管 [P] . 中国专利： CN104282754B . 2017.10.20
• 2. 高性能高集成度L形栅控肖特基势垒隧穿晶体管 [P] . 中国专利： CN104282754A . 2015-01-14
• 3. SCHOTTKY BARRIER QUANTUM WELL RESONANT TUNNELING TRANSISTOR HAVING TRANSISTOR SIZE SMALLER THAN METALLIC OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND HIGH PACKAGE DENSITY [P] . 韩国专利： KR20100046103A . 2010-05-06

  机译： 肖特基势垒量子阱谐振隧道晶体管的尺寸比金属氧化物半导体场效应晶体管小，并且封装密度高

• 4. SCHOTTKY BARRIER QUANTUM WELL RESONANT TUNNELING TRANSISTOR [P] . IN2009DE01962A . 2016-07-01

  机译： 肖特基势垒量子阱隧道晶体管

• 5. Schottky barrier quantum well resonant tunneling transistor [P] . 美国专利： US7936040B2 . 2011-05-03

  机译： 肖特基势垒量子阱共振隧穿晶体管

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