PROBLEM TO BE SOLVED: To provide a manufacturing method of a super junction semiconductor device having a super junction structure including parallel pn layers, that can be manufactured at low cost with improved production efficiency by reducing thermal diffusion time and the number of steps needed for making the parallel pn layers serving as drift layers successive impurity diffusion regions.;SOLUTION: A manufacturing method of a super junction semiconductor device comprises a first step of growing an epitaxial layer 3 on a high-concentration semiconductor substrate 1 with a first conductivity type, a second step of implanting ions of an impurity element with the first conductivity type whose diffusion coefficient is higher than that of boron and implanting boron ions twice or more at different acceleration voltages, a third step of increasing the thickness of the epitaxial layer to a predetermined layer thickness by repeating the first and second steps, and a fourth step of forming parallel pn layers 10 in which impurities are successive in a direction perpendicular to a main plane of the substrate and which are mutually adjacent in a direction parallel to the main plane.;COPYRIGHT: (C)2012,JPO&INPIT
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