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MANUFACTURING METHOD OF HETERO-EPITAXIAL SINGLE CRYSTAL, MANUFACTURING METHOD OF HETEROJUNCTION SOLAR CELL, HETERO-EPITAXIAL SINGLE CRYSTAL, AND HETEROJUNCTION SOLAR CELL
MANUFACTURING METHOD OF HETERO-EPITAXIAL SINGLE CRYSTAL, MANUFACTURING METHOD OF HETEROJUNCTION SOLAR CELL, HETERO-EPITAXIAL SINGLE CRYSTAL, AND HETEROJUNCTION SOLAR CELL
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机译：异质外延单晶的制造方法，异质结太阳电池的制造方法，异质外延单晶的晶体，异质结太阳电池
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摘要
PROBLEM TO BE SOLVED: To provide a manufacturing method of a hetero-epitaxial single crystal with which, when growing, on a substrate of a single crystal, a thin film of a single crystal of which the grating constant is different from that of the substrate, grating defects in the thin film are reduced, a manufacturing method of a heterojunction solar cell employing the same, the hetero-epitaxial single crystal and the heterojunction solar cell.SOLUTION: According to the manufacturing method of the hetero-epitaxial single crystal, by forming an opening 13 in a mask layer 12 formed on a substrate 10, an exposed surface 14 of the substrate 10 is formed on a bottom face of the opening 13 and a silicon single crystal 20 of which a lattice constant is different from that of the substrate 10 is grown on the exposed surface 14 after an outline of the exposed surface 14. A width dimension of the exposed surface 14 is made equal to or less than a width dimension of the exposed surface 14 in the case where a destruction strength of the silicon crystal 20 becomes equal to a stress accompanying lattice strain received from the substrate 10.
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