首页>
外国专利>
METHOD OF MANUFACTURING AVALANCHE PHOTODIODE BY Bi-CMOS PROCESS
METHOD OF MANUFACTURING AVALANCHE PHOTODIODE BY Bi-CMOS PROCESS
展开▼
机译：Bi-CMOS工艺制造雪崩光电二极管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To provide a photodiode that prevents breakdown at a pn-junction end.SOLUTION: A radiation detector 46 includes a semiconductor layer 12 formed on a substrate 14 and a scintillator 30 formed on the semiconductor layer 12. The semiconductor layer 12 includes an n-type doped region 16 disposed so as to be adjacent to the substrate 14 and a p-type doped region 18 disposed so as to be adjacent to the n-type doped region 16. In the semiconductor layer 12, a trench 20 is formed. The trench 20 surrounds the p-type doped region 18, reduces the curvature of a pn junction at an end of the pn junction, and is filled with material 22 that prevents breakdown at the end. The scintillator 30 is disposed on the p-type doped region 18 so as to be optically coupled to the region 18. The radiation detector 46 further includes at least one conductive electrode 24 being electrically in contact with the n-type doped region 16.
展开▼
