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METHOD FOR MANUFACTURING HEXAGONAL SINGLE CRYSTAL, METHOD FOR MANUFACTURING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER AND HEXAGONAL SINGLE CRYSTAL ELEMENT
METHOD FOR MANUFACTURING HEXAGONAL SINGLE CRYSTAL, METHOD FOR MANUFACTURING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER AND HEXAGONAL SINGLE CRYSTAL ELEMENT
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机译：制造六角形单晶晶片的方法，制造六角形单晶晶片的方法，六角形单晶晶片和六角形的单晶晶片
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摘要
PROBLEM TO BE SOLVED: To provide a method for manufacturing a hexagonal single crystal, capable of bending a penetration dislocation included in a hexagonal single crystal on the side of a base plane from a c axial direction to exhaust the penetration dislocation outside the crystal when newly forming a hexagonal single crystal layer using the top of a hexagonal single crystal as a base.SOLUTION: The growth process of a hexagonal single crystal comprises: setting an off-angle in a first direction [11-20] to a base plane {0001} used as a principal surface of crystal growth in the hexagonal single crystal used as a base during crystal growth; converting a dislocation included in the hexagonal single crystal and penetrated in a c axial direction to a defect inclined by 40° or more on the side of the base plane from the c axial direction during crystal growth by forming a cross sectional shape step-wisely reducing crystal thickness toward second directions [-1100] and [1-100] on both side orthogonal to the first direction [11-20] from a reference line AA' parallel to the first direction [11-20]; and controlling a propagation direction of the defect in a direction between a direction [-1-120] opposite to the first direction [11-20] and the second directions [-1100] and [1-100] to exhaust the defect outside the crystal.
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