首页> 外国专利> Method for structuring silicon carbide for e.g. silicon carbide-trench-MOSFET, involves reperforming anisotropic plasma etching step such that passivation layer is removed from trench bottom, and forming enlarged trench region in substrate

Method for structuring silicon carbide for e.g. silicon carbide-trench-MOSFET, involves reperforming anisotropic plasma etching step such that passivation layer is removed from trench bottom, and forming enlarged trench region in substrate

机译：用于构造例如碳化硅的碳化硅的方法碳化硅-沟槽-MOSFET，涉及重新执行各向异性等离子体刻蚀步骤，以便从沟槽底部去除钝化层，并在衬底中形成扩大的沟槽区域

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摘要

The method involves forming a passivation layer (10) with a layer thickness (d1) at a trench bottom (B) of a trench region (G) and at an upper side (O) of a masking layer (5), and with another layer thickness (d2) at a trench side wall (S) and at an inner side (I) of the masking layer in a mask opening (5a). An anisotropic plasma etching step is reperformed such that the passivation layer is removed from the trench bottom and the upper side and partially remains at the side wall and the inner side. An enlarged trench region is formed in a silicon carbide substrate (1). The masking layer is formed from silicon dioxide. A passivation plasma chemical including a fluoro-hydrocarbon-gas, oxygen, helium or argon is chosen in plasma passivation steps.

机译：该方法包括在沟槽区域（G）的沟槽底部（B）和掩模层（5）的上侧（O）以及与另一层形成具有层厚度（d1）的钝化层（10）。在掩模开口（5a）中的沟槽侧壁（S）和掩模层的内侧（I）的层厚（d2）。进行各向异性等离子体蚀刻步骤，使得从沟槽底部和上侧去除钝化层，并且部分保留在侧壁和内侧。在碳化硅衬底（1）中形成扩大的沟槽区域。掩模层由二氧化硅形成。在等离子体钝化步骤中选择包括氟代烃气体，氧气，氦气或氩气的钝化等离子体化学物质。

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公开/公告号DE102012200236B3

专利类型
公开/公告日2013-02-21

原文格式PDF
申请/专利权人 ROBERT BOSCH GMBH;
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申请/专利号DE201210200236
发明设计人 TRAUTMANN ACHIM;BANZHAF CHRISTIAN TOBIAS;
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申请日2012-01-10
分类号H01L21/336;H01L29/78;H01L21/3065;
国家 DE
入库时间 2022-08-21 16:21:47

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