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Wavelength-stabilized semiconductor laser diode for emitting continuous terahertz laser radiation, has plan-parallel plate made of optical transparent material, where plate does not have direct contact to emitted radiation
Wavelength-stabilized semiconductor laser diode for emitting continuous terahertz laser radiation, has plan-parallel plate made of optical transparent material, where plate does not have direct contact to emitted radiation
The diode has an arrangement of a semiconductor laser diode (7) and a plan-parallel plate i.e. etalon (4), made of optical transparent material, where the plate does not have a direct contact to a radiation (10) emitted from a laser exit surface. The thickness of the plan-parallel plate is chosen such that spectral spacing between two neighboring resonance wavelengths is larger than the spectral reinforcing bandwidth of the laser diode. Two surfaces of the plan-parallel plate form an angle with respect to each other, which is smaller than a divergence angle of the radiation.
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