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A method for producing a compound semiconductor material, a III-N layer or a III-N bulk crystal, a reactor for producing the compound semiconductor material, compound semiconductor material, III-N bulk crystal and III-N crystal layer
A method for producing a compound semiconductor material, a III-N layer or a III-N bulk crystal, a reactor for producing the compound semiconductor material, compound semiconductor material, III-N bulk crystal and III-N crystal layer
A process for producing a compound semiconductor material by vapor phase epitaxy in a reactor comprising a flow profile represented by local mass flow rates in a mixture of carrier gases capable of carrying one or more reaction gases towards a substrate (7, 16) A reactor is formed, characterized in that a predetermined value for the concentration of hydrogen at the surface of the substrate (7, 16) is achieved by adjusting a volume flow rate of hydrogen as a first carrier gas in the mixture, and the resulting influence on the flow profile in the reactor (10, 20) is compensated by adjusting the respective volumetric flow rates of a second and a third carrier gas in the mixture to obtain a predetermined, independent of the hydrogen concentration flow profile.
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