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THE FABRICATING METHOD OF SINGLE ELECTRON TRANSISTOR (SET) BY EMPLOYING NANO-LITHOGRAPHICAL TECHNOLOGY IN THE SEMICONDUCTOR PROCESS
THE FABRICATING METHOD OF SINGLE ELECTRON TRANSISTOR (SET) BY EMPLOYING NANO-LITHOGRAPHICAL TECHNOLOGY IN THE SEMICONDUCTOR PROCESS
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机译：在半导体工艺中应用纳米光刻技术制作单电子晶体管（组）的方法。
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摘要
The present invention comprises: (a) a sealant sealing material of the base molecule or atom state formed on the substrate and the step of opening the top (top-opening) is deposited on, to reduce the diameter of the top opening gradually the opening diameter of the nano-opening so that the nano-opening smaller than the diameter reduction of the upper opening of the cylindrical nano-hole, (b) maintaining the substrate in the horizontal direction, gas molecules or to look aligned orthogonally to the deposited material atoms into the nano-opening the collapsed state, the quantum dot nano-island electrode having a diameter equal to the diameter of the nano-opening collapsed the method comprising the estimated position to be deposited directly on the surface of the substrate in the nano-cylindrical holes by the deposition material passing through the nano-opening the collapsed, (c) and keep the output of the evaporation material in the same orientation as before , the tilt of the substrate so as to have an inclination angle to the right around the said reduced nano-opening, the drain electrode by the quantum dot nano-deposition material passing through the nano-opening in the collapsed position of the estimated right island electrode on the surface of the substrate and depositing step, (d) maintaining the output of the evaporation material in the same orientation as before and the substrate to tilt to the left so as to have an inclination angle as the center collapsed nano openings, the deposition through said reduced opening nano a source electrode nano quantum dots of a material comprising the steps of depositing on the expected position of the island electrode left on the surface of the substrate, (e) keeping the output of the evaporation material in the same orientation as before and the substrate, wherein the nano-reduction so as to have an opening with a rotation angle of inclination ( ) to the central shaft is rotated clockwise, the gate electrode by the quantum dot nano-deposition material and depositing the estimated forward position of the island electrode on the surface of the substrate, ( f) Finally, rinsing solution (i.e., wet etching) or etching gas (i.e., by dry etching), and removing the cylindrical nano-hole in the photoresist on the substrate, the nano-scale quantum dot nano-island electrode, a drain electrode, nano quantum dots, the source electrode by using a process comprising a step of manufacturing directly on the surface of the nano-dots and the gate electrode to the substrate stage-electron transistor (SET), including nano-dots by using the nano-lithographic techniques in semiconductor processing single-electron transistor to provide a method for producing a (SET).
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