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MEMRISTOR-BASED MEMORY CIRCUIT FOR READING-OUT THE RESISTANCE OF MEMRISTOR WITHOUT RESISTANCE DRIFT USING CAPACITORS
MEMRISTOR-BASED MEMORY CIRCUIT FOR READING-OUT THE RESISTANCE OF MEMRISTOR WITHOUT RESISTANCE DRIFT USING CAPACITORS
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机译：基于存储器的存储器电路，用于在不使用电容器的电阻漂移的情况下读出存储器的电阻
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摘要
Purpose a: memory circuit based on memristor, one change shape of the memristor resistance coefficient without memristor resistance coefficient is read by using a capacitor, it is arranged to eliminate the variation of a memristor resistance coefficient, the quantity by enabling total charge is equal in reverse leading through the quantity of the total charge of memristor by a memristor since capacitor discharges in forward direction. Construction: a second switch (130) is connect with a memristor (M) in series. Third switchs (160) and connect with a capacitor (C) in parallel and provide a paths so that stream can be with being discharged by second switch and memristor when strong input current pulse be applied to memristor for storing a resistance coefficient. One difference amplifier (170) measures a voltage across the raw memristor of the miscarriage by a current source. First switch (120), which provides a paths, enables stream to be discharged into ground, after stream is stored in capacitor, after by memristor then by the second switch in the reverse leading compared with direction when stream is being storage.
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