首页> 外国专利> METHOD FOR PREPARING A COMPLEX SUBSTRATE FILM AND BACKGRINDING TAPE FOR SEMICONDUCTOR WAFER COMPRISING A COMPLEX SUBSTRATE FILM PREPARED BY THE SAME

METHOD FOR PREPARING A COMPLEX SUBSTRATE FILM AND BACKGRINDING TAPE FOR SEMICONDUCTOR WAFER COMPRISING A COMPLEX SUBSTRATE FILM PREPARED BY THE SAME

机译:包含由相同的薄膜制备的复合衬底薄膜的半导体衬底的复合衬底薄膜的制备方法和背磨带

摘要

PURPOSE: A backgrinding tape comprising a complex substrate film is provided to prevent a semiconductor wafer from bending in the process of thickness reduction of the semiconductor wafer and to reduce peeling force, thereby preventing errors in a peeling process induced in the process of removing the backgrinding tape. CONSTITUTION: A method for preparing a complex substrate film comprises the steps of: providing a polyolefin film with a thickness of 50 to 200 um; forming an adhesive layer (4) by applying an adhesive composition on a surface of the polyolefin film; and combining the polyolefin film having the adhesive layer with a polyester film having a thickness of 10 to 50 um. The adhesive composition comprises 100 parts by weight of an acrylic copolymer, 1 to 5 parts by weight of a thermocurable isocyanate curing agent, and 10 to 30 parts by weight of a solvent.
机译:用途:提供包括复合衬底膜的背面研磨带,以防止半导体晶片在减薄半导体晶片的过程中弯曲并减小剥离力,从而防止在去除背面研磨的过程中引起的剥离过程中的错误胶带。组成:一种复杂的基底膜的制备方法包括以下步骤:提供厚度为50至200微米的聚烯烃膜;通过在聚烯烃膜的表面上涂布粘合剂组合物来形成粘合剂层(4)。将具有粘合剂层的聚烯烃膜与厚度为10至50μm的聚酯膜组合。粘合剂组合物包含100重量份的丙烯酸共聚物,1至5重量份的可热固化的异氰酸酯固化剂和10至30重量份的溶剂。

著录项

  • 公开/公告号KR20130099604A

    专利类型

  • 公开/公告日2013-09-06

    原文格式PDF

  • 申请/专利权人 KCC CORPORATION;

    申请/专利号KR20120021236

  • 发明设计人 HWANG KYO SUNG;LEE AHN SEOB;

    申请日2012-02-29

  • 分类号B32B27/08;B32B7/12;B32B27/16;C09J7/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:26:21

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